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MMBTSC2412
NPN Silicon Epitaxial Planar Transistor
for general purpose applications. The transistor is subdivided into three groups Q, R and S. according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj TS
Value 60 50 7 150 200 150 -55 to +150
Unit V V V mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/10/2005
MMBTSC2412
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Q R S hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT COB Min. 120 180 270 60 50 7 Typ. 180 2 Max. 270 390 560 0.1 0.1 0.4 3.5 Unit V V V A A V MHz pF
Collector Base Breakdown Voltage at IC=50A Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50A Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=7V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, -IE=2mA, f=100MHz Output Capacitance at VCE=12V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/10/2005
MMBTSC2412
Fig. 1 Grounded emitter propagation characteristics
50 100 VCE=6V
Fig.2 Grounded emitter output characteristics(I)
Ta=25 oC 0.50mA 0.45mA 0.40mA 10
Fig.3 Grounded emitter output characteristics(II)
Ta=25 oC 30 A 27 A 24 A 21 A 6 18 A 15 A 4 2 0 0 4 8 12 16 20 12 A 9A 6A 3A I B=0A
Collector current Ic (mA)
Collector current Ic (mA)
80
0.35mA 0.30mA
Collector current Ic (mA)
20 10
Ta=100 oC
8
5 2 1 0.5 0.2 0.1
60
0.25mA 0.20mA
25 oC
-55 oC
40 20
0.15mA 0.10mA 0.05mA
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0
I B=0A
Base to emitter voltage VBE(V)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.4 DC current gain vs. collector current (I)
500 200 Ta=25 oC 500 VCE=5V 3V 1V 200
Fig.5 DC current gain vs. collector current (II)
o Ta=100 C VCE=5V
Collector saturation voltage VCE(sat) (V)
Fig.6 Collector-emitter saturation voltage vs. collector current
0.5 0.2 Ta=25 oC
25 C
o
DC current gain h FE
DC current gain h FE
-55 C 100 50
o
100 50
0.1 0.05
I C/IB=50 20 10
20 10 0.2 0.5 1 2 5 10 20 50 100 200
20 10 0.2 0.5 1 2 5 10 20 50 100 200
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200
Collector Current Ic (mA)
Collector saturation voltage VCE(sat) (V)
Collector Current Ic (mA)
Collector saturation voltage VCE(sat) (V)
Collector Current Ic (mA) Fig.9 Gain bandwidth product vs. emitter current
Transition frequency:fT(MHz)
500 Ta=25 oC VCE=6V
Fig.7 Collector-emitter saturation voltage vs. collector current(I)
0.5 0.2
Ta=100 C o 25 C
o
Fig.8 Collector-emitter saturation voltage vs. collector current(II)
0.5 0.2
Ta=100 C o 25 C o -55 C
o
I C/IB=10
I C/IB=50
0.1 0.05
0.1 0.05
200
-55 C
o
100
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100
50 -0.5 -1
-2
-5 -10
-20 -50 -100
Collector Current Ic (mA)
Collector Current Ic (mA)
Emitter Current I E (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/10/2005
MMBTSC2412
Base collector time constant:Cc.rbb'(ps)
Collector output capacitance:Cob(pF) Emitter input capacitance :Cib(pF)
Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
20 10 Ta=25 oC f=1MHz I E=0A I C=0A
Fig.11 Base-collector time constant vs. emitter current
200 Ta=25 oC f=32MHz VCB=6V
Cib
100 50
5 Cob 2
20
1 0.2 0.5 1 2 5 10 20 50
10 -0.2 -0.5 -1 -2 -5 -10
Collector to base voltage:VCB(V) Emitter to base voltage :VEB(V)
Emitter Current I E (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 20/10/2005

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